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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD849 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Line-operated horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1500 600 5 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 3 Collector current-peak Total power dissipation Junction temperature Storage temperature TC=90ae 5 25 150 -65~150 UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=3 A;IB=1A IC=3 A;IB=1A VCB=750V;IE=0 ICBO Collector cut-off current VCB=1500V;IE=0 hFE-1 hFE-2 tf ts DC current gain DC current gain IC=0.5A ; VCE=5V IC=3A ; VCE=10V 8 4 MIN 600 5 TYP. 2SD849 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat MAX UNIT V V 5.0 1.5 0.1 V V mA 1.0 TOR NDU ICO E SEM ANG INCH 12 Fall time 0.9 |I IC=3 A;IBend=1A;LB=20|I H Storage time 13 s |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD849 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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